Epitaxial (EPI) Silicon Wafer

Tsanangudzo

Epitaxial Silicon Waferkana EPI Silicon Wafer, iwafer ye semiconducting crystal layer yakaiswa pane yakakwenenzverwa crystal pamusoro pesilicon substrate ne epitaxial kukura.Iyo epitaxial layer inogona kunge yakafanana neiyo substrate nehomogeneous epitaxial kukura, kana exotic layer ine chaiyo inodiwa mhando neheterogeneous epitaxial kukura, iyo inotora epitaxial kukura tekinoroji inosanganisira kemikari vapor deposition CVD, liquid phase epitaxy LPE, pamwe nemolecular beam. epitaxy MBE kuwana iyo yepamusoro mhando yeyakaderera defect density uye kunaka kwepamusoro roughness.Silicon Epitaxial Wafers anonyanya kushandiswa mukugadzira epamberi semiconductor zvishandiso, zvakanyanya kusanganiswa semiconductor zvinhu ICs, discrete uye magetsi zvishandiso, zvakare anoshandiswa kune chinhu che diode uye transistor kana substrate yeIC senge bipolar type, MOS uye BiCMOS zvishandiso.Uyezve, akawanda layer epitaxial uye gobvu firimu EPI silicon wafers anowanzo shandiswa mune microelectronics, photonics uye photovoltaics application.

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Epitaxial Silicon Wafers kana EPI Silicon Wafer kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe4, 5 uye 6 inch (100mm, 125mm, 150mm dhayamita), ine orientation <100>, <111>, epilayer resistivity ye <1ohm -cm kana kusvika 150ohm-cm, uye epilayer ukobvu hwe<1um kana kusvika 150um, kugutsa izvo zvakasiyana-siyana zvinodiwa pakupedza etched kana LTO kurapwa, yakarongedzerwa mukaseti ine katoni bhokisi kunze, kana seyakagadzirirwa kutsanangurwa kune yakakwana mhinduro. .

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Kutsanangurwa Kwehunyanzvi

Epi Silicon Wafer

Epitaxial Silicon Waferskana EPI Silicon Wafer kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe 4, 5 uye 6 inch (100mm, 125mm, 150mm dhayamita), ine orientation <100>, <111>, epilayer resistivity ye <1ohm-cm kana kusvika pa 150ohm-cm, uye epilayer ukobvu hwe<1um kana kusvika 150um, kugutsa zvinodiwa zvakasiyana-siyana pakupedzisa kwe etched kana kuti LTO kurapwa, yakarongedzerwa mukaseti ine katoni bhokisi kunze, kana seyakagadzirirwa kutsanangurwa kune yakakwana mhinduro.

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal chimiro	Diamond
Color	Rima grey
Melting Point	1414°C, 1687.15 K
Boiling Point	3265°C, 3538.15 K
Density pa300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
Nhamba yeCAS	7440-21-3
EC Nhamba	231-130-8

Aihwa.	Items	Mataurirwo Akaitwa
1	General Characteristics
1-1	Size	4"	5"	6"
1-2	Diameter mm	100±0.5	125±0.5	150±0.5
1-3	Orientation	<100>, <111>	<100>, <111>	<100>, <111>
2	Epitaxial Layer Hunhu
2-1	Kukura Nzira	CVD	CVD	CVD
2-2	Conductivity Type	P kana P+, N/ kana N+	P kana P+, N/ kana N+	P kana P+, N/ kana N+
2-3	Ukobvu μm	2.5-120	2.5-120	2.5-120
2-4	Ukobvu Uniformity	≤3%	≤3%	≤3%
2-5	Kuramba Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Resistivity Uniformity	≤3%	≤5%	-
2-7	Dislocation cm-2	<10	<10	<10
2-8	Surface Quality	Hapana chip, haze kana orange peel inosara, nezvimwe.
3	Bata Substrate Hunhu
3-1	Kukura Nzira	CZ	CZ	CZ
3-2	Conductivity Type	P/N	P/N	P/N
3-3	Ukobvu μm	525-675	525-675	525-675
3-4	Ukobvu Uniformity max	3%	3%	3%
3-5	Kuramba Ω-cm	Sezvinodiwa	Sezvinodiwa	Sezvinodiwa
3-6	Resistivity Uniformity	5%	5%	5%
3-7	TTV μm max	10	10	10
3-8	Bow μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD masendimita-2 max	100	100	100
3-11	Edge Profile	Rounded	Rounded	Rounded
3-12	Surface Quality	Hapana chip, haze kana orange peel inosara, nezvimwe.
3-13	Back Side Finish	Etched kana LTO (5000±500Å)
4	Packing	Makaseti mukati, bhokisi bhokisi kunze.

Silicon Epitaxial Wafersanonyanya kushandiswa mukugadzira epamberi semiconductor midziyo, yakanyatsobatanidzwa semiconductor zvinhu ICs, discrete uye magetsi maturusi, zvakare anoshandiswa kune chinhu che diode uye transistor kana substrate yeIC senge bipolar type, MOS uye BiCMOS zvishandiso.Uyezve, akawanda layer epitaxial uye gobvu firimu EPI silicon wafers anowanzo shandiswa mune microelectronics, photonics uye photovoltaics application.