Gallium Antimonide GaSb

Tsanangudzo

Gallium Antimonide GaSb, semiconductor yeboka III-V macompound ane zinc-blende lattice structure, inogadzirwa ne6N 7N high purity gallium uye antimony elements, uye inokura kuita crystal ne LEC nzira kubva kune directionally frozen polycrystalline ingot kana VGF nzira ine EPD<1000cm.^-3.GaSb wafer inogona kuchekwa mukati uye kugadzirwa mushure meiyo imwe crystalline ingot ine yakakwira kufanana kwemagetsi paramita, yakasarudzika uye inogara yakagadzika lattice zvimiro, uye yakaderera defect density, yakanyanya refractive index kupfuura mamwe akawanda asiri esimbi makomisheni.GaSb inogona kugadziriswa nesarudzo yakafara mune chaiyo kana kuremerwa, yakaderera kana yakakwira doped concentration, yakanaka kupera kwepamusoro uye yeMBE kana MOCVD epitaxial kukura.Gallium Antimonide substrate iri kushandiswa mune yakanyanya kucheka-kumucheto photo-optic uye optoelectronic application senge magadzirirwo emifananidzo ma detectors, infrared detectors ane hupenyu hwakareba, kunzwisiswa kwakanyanya uye kuvimbika, photoresist chikamu, infrared LEDs uye lasers, transistors, thermal photovoltaic cell. uye thermo-photovoltaic systems.

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Gallium Antimonide GaSb kuWestern Minmetals (SC) Corporation inogona kupihwa nen-type, p-type uye isina kuvharwa semi-insulating conductivity muhukuru hwe 2” 3” uye 4” (50mm, 75mm, 100mm) dhayamita, yakatarisana <111> kana <100>, uye newafer pamusoro pekupedzisira se-yakachekwa, yakamiswa, yakakwenenzverwa kana yemhando yepamusoro epitaxy yakagadzirira kupera.Zvese zvimedu zvinonyorerwa laser kuti zvizivikanwe.Zvichakadaro, polycrystalline gallium antimonide GaSb bundu inogadziridzwawo pakukumbira kune yakakwana mhinduro.

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Kutsanangurwa Kwehunyanzvi

Gallium Antimonide

GaSb

Gallium Antimonide GaSbsubstrate iri kushandiswa mune yakanyanya kucheka-kumucheto photo-optic uye optoelectronic application senge magadzirirwo emifananidzo ma detectors, infrared detectors ane hupenyu hwakareba, kunzwisiswa kwakanyanya uye kuvimbika, photoresist chikamu, infrared LEDs uye lasers, transistors, thermal photovoltaic cell uye thermo. -photovoltaic systems.

	Items	Mataurirwo Akaitwa
1	Size	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Kukura Nzira	LEC	LEC	LEC
4	Conductivity	P-type/Zn-doped, Un-doped, N-type/Te-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Ukobvu μm	500±25	600±25	800±25
7	Oriental Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Kufamba cm2/Vs	200-3500 kana sezvinodiwa
10	Carrier Concentration cm-3	(1-100)E17 kana sezvinodiwa
11	TTV μm max	15	15	15
12	Bow μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	500	1000	2000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer mudziyo wakavharwa muAluminium bag.

Linear Formula	GaSb
Molecular Weight	191.48
Crystal chimiro	Zinc blende
Chitarisiko	Gray crystalline yakasimba
Melting Point	710°C
Boiling Point	N/A
Density pa300K	5.61 g/cm³
Energy Gap	0.726 eV
Intrinsic resistivity	1E3 Ω-cm
Nhamba yeCAS	12064-03-8
EC Nhamba	235-058-8

Gallium Antimonide GaSbkuWestern Minmetals (SC) Corporation inogona kupihwa nen-type, p-type uye isina kuvharwa semi-insulating conductivity muhukuru hwe 2” 3” uye 4” (50mm, 75mm, 100mm) dhayamita, kutaridzika <111> kana <100 >, uye newafer pamusoro pekupedzisira se-yakachekwa, yakamiswa, yakakwenenzverwa kana yemhando yepamusoro epitaxy yakagadzirira kupera.Zvese zvimedu zvinonyorerwa laser kuti zvizivikanwe.Zvichakadaro, polycrystalline gallium antimonide GaSb bundu inogadziridzwawo pakukumbira kune yakakwana mhinduro.