Gallium Phosphide GaP

Tsanangudzo

Gallium Phosphide GaP, yakakosha semiconductor yezvakasiyana zvemagetsi zvivakwa sezvimwe III-V zvinhu zvakasanganiswa, inopenya mu thermodynamically stable cubic ZB chimiro, iorenji-yellow semitransparent crystal zvinhu ine isina kunanga bhendi gap ye2.26 eV (300K), iyo iri yakagadzirwa kubva ku6N 7N yakakwira kuchena gallium uye phosphorus, uye yakakura kuita kristaro imwe chete neLiquid Encapsulated Czochralski (LEC) maitiro.Gallium Phosphide crystal inoiswa sarufa kana tellurium kuti iwane n-mhando semiconductor, uye zinc yakanyungudutswa sep-mhando conductivity yekuenderera mberi kugadzirwa mune yaunoda wafer, iyo ine maapplication mu optical system, zvemagetsi uye zvimwe optoelectronics zvishandiso.Single Crystal GaP wafer inogona kugadzirirwa Epi-Yakagadzirira yako LPE, MOCVD uye MBE epitaxial application.Yakakwirira mhando imwe crystal Gallium phosphide GaP wafer p-mhando, n-mhando kana undoped conductivity kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe2 ″ uye 3” (50mm, 75mm dhayamita), kutarisisa <100>, <111 > nepamusoro pekupedzisira se-yakachekwa, yakakwenenzverwa kana epi-yakagadzirira maitiro.

Applications

Iine yakaderera ikozvino uye yakanyanya kushanda mukubuda kwechiedza, Gallium phosphide GaP wafer inokodzera optical kuratidza masisitimu seyakaderera-mutengo tsvuku, orenji, uye girinhi light-emitting diodes (LEDs) uye backlight yeyero uye yegirinhi LCD nezvimwewo uye LED machipisi kugadzira ne. kupenya kwakadzika kusvika pakati, GaP inogamuchirwa zvakanyanya seyakakosha substrate ye infrared sensors uye yekutarisa makamera kugadzira.

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Kutsanangurwa Kwehunyanzvi

Gallium Phosphide GaP

Yakakwirira mhando imwe crystal Gallium Phosphide GaP wafer kana substrate p-mhando, n-mhando kana undoped conductivity kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe2 ″ uye 3" (50mm, 75mm) mudhayamita, kutaridzika <100> , <111> ine pamusoro pekupedzisira se-yakachekwa, yakapetwa, yakamiswa, yakakwenenzverwa, epi-yakagadzirira kugadziridzwa mugaba rewafer rakanamwa mualuminium composite bhegi kana seyakagadzirirwa kutsanangurwa kune yakakwana mhinduro.

Aihwa.	Items	Mataurirwo Akaitwa
1	Kukura kweGaP	2"
2	Diameter mm	50.8 ± 0.5
3	Kukura Nzira	LEC
4	Conductivity Type	P-type/Zn-doped, N-type/(S, Si,Te) -doped, Un-doped
5	Orientation	<1 1 1> ± 0.5°
6	Ukobvu μm	(300-400) ± 20
7	Kuramba Ω-cm	0.003-0.3
8	Oriental Flat (OF) mm	16±1
9	Identification Flat (IF) mm	8±1
10	Horo Mobility cm2/Vs min	100
11	Carrier Concentration cm^-3	(2-20) E17
12	Dislocation Density cm^-2max	2.00E+05
13	Surface Finish	P/E, P/P
14	Packing	Single wafer mudziyo wakavharwa mualuminium composite bag, katoni bhokisi kunze

Linear Formula	GaP
Molecular Weight	100.7
Crystal chimiro	Zinc blende
Apperance	Orange yakasimba
Melting Point	N/A
Boiling Point	N/A
Density pa300K	4.14 g/cm³
Energy Gap	2.26 eV
Intrinsic resistivity	N/A
Nhamba yeCAS	12063-98-8
EC Nhamba	235-057-2

Gallium Phosphide GaP Wafer, ine yakaderera ikozvino uye yakakwirira kushanda mukuvhenekera kwechiedza, inokodzera optical kuratidza masisitimu seyakaderera-mutengo dzvuku, orenji, uye girini chiedza-emitting diodes (LEDs) uye backlight yeyero uye yegirinhi LCD nezvimwewo uye LED machipisi kugadzira neakadzika kusvika pakati. kupenya, GaP inogamuchirwa zvakanyanya seyakakosha substrate ye infrared sensors uye yekutarisa makamera kugadzira.