Indium Arsenide InAs

Tsanangudzo

Indium arsenide InAs crystal is a compound semiconductor yeboka III-V yakagadzirwa neinenge 6N 7N pure Indium neArsenic element uye yakakura imwe crystal neVGF kana Liquid Encapsulated Czochralski ( LEC ) process, grey color kuoneka, cubic crystals ane zinc-blende structure. , nzvimbo yekunyungudika ye942 °C.Indium arsenide band gap ishanduko yakananga yakafanana negallium arsenide, uye iyo yakarambidzwa bhendi hupamhi i0.45eV (300K).InAs crystal ine yakakwira kufanana kwemagetsi paramita, garandi retisi, yakakwira erekitironi kufamba uye yakaderera density.A cylindrical InAs crystal inokura neVGF kana LEC inogona kuchekwa uye kugadzirwa kuita wafer se-yakachekwa, yakamiswa, yakakwenenzverwa kana epi-yakagadzirira MBE kana MOCVD epitaxial kukura.

Applications

Indium arsenide crystal wafer inzvimbo huru yekugadzira zvishandiso zveHoro uye magineti magineti yekufamba kwayo horo asi nhete yesimba bandgap, chinhu chakanakira kuvaka infrared detectors ine wavelength renji ye1–3.8 µm inoshandiswa mukushandiswa kwesimba repamusoro-soro. pakamuri tembiricha, pamwe nepakati wavelength infrared super lattice lasers, yepakati-infrared LEDs zvishandiso zvekugadzira yayo 2-14 μm wavelength renji.Uyezve, InAs inzvimbo yakanaka yekuwedzera kutsigira iyo heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb kana AlGaSb super lattice chimiro nezvimwe.

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Kutsanangurwa Kwehunyanzvi

Indium Arsenide

InAs

Indium Arsenide Crystal Waferinzvimbo huru yekugadzira zvishandiso zveHoro uye magineti emagetsi sensor yekufamba kwayo kwehoro yepamusoro asi nhete yesimba bhendi, chinhu chakanakira kuvaka infrared detectors ine wavelength renji ye1-3.8 µm inoshandiswa mune yakakwirira-simba maapplication pakamuri tembiricha, pamwe nepakati wavelength infrared super lattice lasers, yepakati-infrared LEDs zvishandiso zvekugadzira yayo 2-14 μm wavelength renji.Uyezve, InAs inzvimbo yakanaka yekuwedzera kutsigira iyo heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb kana AlGaSb super lattice chimiro nezvimwe.

Aihwa.	Items	Mataurirwo Akaitwa
1	Size	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Kukura Nzira	LEC	LEC	LEC
4	Conductivity	P-type/Zn-doped, N-type/S-doped, Un-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Ukobvu μm	500±25	600±25	800±25
7	Oriental Flat mm	16±2	22±2	32±2
8	Identification Flat mm	8±1	11±1	18±1
9	Kufamba cm2/Vs	60-300, ≥2000 kana sezvinodiwa
10	Carrier Concentration cm-3	(3-80)E17 kana ≤5E16
11	TTV μm max	10	10	10
12	Bow μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	1000	2000	5000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer mudziyo wakavharwa muAluminium bag.

Linear Formula	InAs
Molecular Weight	189.74
Crystal chimiro	Zinc blende
Chitarisiko	Gray crystalline yakasimba
Melting Point	(936-942)°C
Boiling Point	N/A
Density pa300K	5.67 g/cm³
Energy Gap	0.354 eV
Intrinsic Resistivity	0.16 Ω-cm
Nhamba yeCAS	1303-11-3
EC Nhamba	215-115-3

Indium Arsenide InAskuWestern Minmetals (SC) Corporation inogona kupihwa sebundu repolycrystalline kana kristaro imwechete se-yakachekwa, yakamiswa, yakakwenenzverwa, kana epi-yakagadzirira mawafer muhukuru hwe2 "3" uye 4" (50mm, 75mm,100mm) dhayamita, uye p-mhando, n-mhando kana un-doped conductivity uye <111> kana <100> kutarisisa.Iyo yakagadziriswa yakatarwa ndeye mhinduro yakakwana kune vatengi vedu pasi rese.