Indium Phosphide InP

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Indium Phosphide InP,CAS No.22398-80-7, melting point 1600 ° C, binary compound semiconductor yeIII-V mhuri, face-centered cubic "zinc blende" crystal structure, yakafanana nevakawanda veIII-V semiconductors, inogadzirwa kubva 6N 7N yakakwira kuchena indium uye phosphorus element, uye yakakura kuita imwe crystal neLEC kana VGF maitiro.Indium Phosphide crystal inogadzirwa kuti ive n-mhando, p-mhando kana semi-insulating conductivity kuti iwedzere kugadzira wafer inosvika 6 ″ (150 mm) dhayamita, iyo inoratidzira bhendi rayo rakananga, kufamba kwepamusoro kwemagetsi nemaburi uye kupisa kunoshanda. conductivity.Indium Phosphide InP Wafer prime kana test giredhi kuWestern Minmetals (SC) Corporation inogona kupihwa nep-type, n-type uye semi-insulating conductivity muhukuru hwe2"3"4" uye 6"(kusvika 150mm) dhayamita, orientation <111> kana <100> uye ukobvu 350-625um ine pamusoro pekupedzisira kweyakaiswa uye yakakwenenzverwa kana Epi-yakagadzirira maitiro.Zvichakadaro Indium Phosphide Imwe Crystal ingot 2-6 ″ inowanikwa pakukumbira.Polycrystalline Indium Phosphide InP kana Multi-crystal InP ingot muhukuru hweD (60-75) x Length (180-400) mm ye2.5-6.0kg ine carrier concentration isingasviki 6E15 kana 6E15-3E16 inowanikwawo.Chero dhizaini yakasarudzika inowanikwa pakukumbira kuti uwane mhinduro yakakwana.

Applications

Indium Phosphide InP wafer inoshandiswa zvakanyanya kugadzira optoelectronic components, high-power and high-frequency electronic devices, se substrate ye epitaxial indium-gallium-arsenide (InGaAs) based opto-electronic devices.Indium Phosphide iri zvakare mukugadzirwa kwezviedza zvinonyanya kuvimbisa mune optical fiber communications, microwave power source madivayiri, microwave amplifiers uye gedhi FETs zvishandiso, high-speed modulators uye mafoto-detectors, uye satellite navigation zvichingodaro.

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Indium Phosphide InP

Indium Phosphide Imwe CrystalWafer (InP crystal ingot kana Wafer) kuWestern Minmetals (SC) Corporation inogona kupihwa nep-type, n-type uye semi-insulating conductivity muhukuru hwe2" 3" 4" uye 6" (kusvika 150mm) dhayamita, orientation <111> kana <100> uye ukobvu 350-625um ine pamusoro pekupedzisira kweyakaiswa uye yakakwenenzverwa kana Epi-yakagadzirira maitiro.

Indium Phosphide Polycrystallinekana Multi-Crystal ingot (InP poly ingot) muhukuru hweD (60-75) x L(180-400) mm ye2.5-6.0kg ine carrier concentration isingasviki 6E15 kana 6E15-3E16 iripo.Chero dhizaini yakasarudzika inowanikwa pakukumbira kuti uwane mhinduro yakakwana.

Aihwa.	Items	Mataurirwo Akaitwa
1	Indium Phosphide Imwe Crystal	2"	3"	4"
2	Diameter mm	50.8±0.5	76.2±0.5	100±0.5
3	Kukura Nzira	VGF	VGF	VGF
4	Conductivity	P/Zn-doped, N/(S-doped kana isina-doped), Semi-insulating
5	Orientation	(100)±0.5°, (111)±0.5°
6	Ukobvu μm	350±25	600±25	600±25
7	Oriental Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Kufamba cm2/Vs	50-70, >2000, (1.5-4)E3
10	Carrier Concentration cm-3	(0.6-6)E18, ≤3E16
11	TTV μm max	10	10	10
12	Bow μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	500	1000	2000
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer mudziyo wakavharwa mualuminium composite bag.

Aihwa.	Items	Mataurirwo Akaitwa
1	Indium Phosphide Ingot	Poly-Crystalline kana Multi-Crystal Ingot
2	Crystal Size	D(60-75) x L(180-400)mm
3	Huremu paCrystal Ingot	2.5-6.0Kg
4	Mobility	≥3500 cm²/VS
5	Carrier Concentration	≤6E15, kana 6E15-3E16 cm^-3
6	Packing	Imwe neimwe InP yekristaro ingot iri mubhegi repurasitiki rakavharwa, 2-3 ingots mune imwe katoni bhokisi.

Linear Formula	InP
Molecular Weight	145.79
Crystal chimiro	Zinc blende
Chitarisiko	Crystalline
Melting Point	1062°C
Boiling Point	N/A
Density pa300K	4.81 g/cm³
Energy Gap	1.344 eV
Intrinsic resistivity	8.6E7 Ω-cm
Nhamba yeCAS	22398-80-7
EC Nhamba	244-959-5

Indium Phosphide InP Waferinoshandiswa zvakanyanya pakugadzira optoelectronic components, high-power and high-frequency electronic devices, se substrate ye epitaxial indium-gallium-arsenide (InGaAs) based opto-electronic devices.Indium Phosphide iri zvakare mukugadzirwa kwezviedza zvinonyanya kuvimbisa mune optical fiber communications, microwave power source madivayiri, microwave amplifiers uye gedhi FETs zvishandiso, high-speed modulators uye mafoto-detectors, uye satellite navigation zvichingodaro.