Gallium Nitride GaN

Tsanangudzo

Gallium Nitride GaN, CAS 25617-97-4, molecular mass 83.73, wurtzite crystal structure, ibhinari compound yakananga bhandi-gap semiconductor yeboka III-V inokura neyakagadziriswa ammonothermal process method.Inoratidzwa neyakakwana yekristaro mhando, yakakwirira yekupisa conductivity, yakakwira erekitironi kufamba, yakakwirira yakakosha munda wemagetsi uye yakakura bandgap, Gallium Nitride GaN ine hunhu hunodiwa mune optoelectronics uye sensing application.

Applications

Gallium Nitride GaN inokodzera kugadzirwa kweiyo yekucheka-kumucheto kumhanya uye yakakwirira inopenya inopenya-emitting diodes ma LEDs zvikamu, laser uye optoelectronics zvishandiso zvakaita segirinhi neblue lasers, yakakwira electron mobility transistors (HEMTs) zvigadzirwa uye mune yakakwirira-simba. uye yakakwirira-tembiricha michina kugadzira indasitiri.

Delivery

Gallium Nitride GaN kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwedenderedzwa wafer 2 inch ” kana 4 ” (50mm, 100mm) uye square wafer 10 × 10 kana 10 × 5 mm.Chero saizi yakagadziridzwa uye yakatarwa ndeye mhinduro yakakwana kune vatengi vedu pasi rese.

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Kutsanangurwa Kwehunyanzvi

Gallium Nitride GaN

Gallium Nitride GaNkuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwedenderedzwa wafer 2 inch ” kana 4 ” (50mm, 100mm) uye square wafer 10 × 10 kana 10 × 5 mm.Chero saizi yakagadziridzwa uye yakatarwa ndeye mhinduro yakakwana kune vatengi vedu pasi rese.

Aihwa.	Items	Mataurirwo Akaitwa
1	Shape	Circular	Circular	Square
2	Size	2"	4"	--
3	Diameter mm	50.8±0.5	100±0.5	--
4	Side Kureba mm	--	--	10x10 kana 10x5
5	Kukura Nzira	HVPE	HVPE	HVPE
6	Orientation	C-ndege (0001)	C-ndege (0001)	C-ndege (0001)
7	Conductivity Type	N-mhando/Si-doped, Un-doped, Semi-insulating
8	Kuramba Ω-cm	<0.1, <0.05, >1E6
9	Ukobvu μm	350±25	350±25	350±25
10	TTV μm max	15	15	15
11	Bow μm max	20	20	20
12	EPD masendimita-2	<5E8	<5E8	<5E8
13	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
14	Kukasharara Kwepamusoro	Mberi: ≤0.2nm, Kumashure: 0.5-1.5μm kana ≤0.2nm
15	Packing	Single wafer gaba rakavharwa muAluminium bag.

Linear Formula	GaN
Molecular Weight	83.73
Crystal chimiro	Zinc blende/Wurzite
Chitarisiko	Translucent yakasimba
Melting Point	2500 °C
Boiling Point	N/A
Density pa300K	6.15 g/cm³
Energy Gap	(3.2-3.29) eV pa300K
Intrinsic resistivity	>1E8 Ω-cm
Nhamba yeCAS	25617-97-4
EC Nhamba	247-129-0

Gallium Nitride GaNinokodzera kugadzirwa kweyekucheka-kumucheto kumhanyisa uye yakakwirira inopenya chiedza-emitting diode ma LEDs zvikamu, laser uye optoelectronics zvishandiso zvakaita segirinhi neblue lasers, high electron mobility transistors (HEMTs) zvigadzirwa uye mune yakakwirira-simba uye yakakwirira- tembiricha zvigadzirwa kugadzira indasitiri.