FZ NTD Silicon Wafer

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FZ-NTD Silicon Wafer, inozivikanwa seFloat-Zone Neutron Transmutation Doped Silicon Wafer.Oxygen-isina, kuchena kwepamusoro uye yakanyanya resistivity silicon inogona kuwanikwa by Float-zone FZ ( Zone-Floating) kukura kwekristaro, High resistivity FZ silicon crystal inowanzoitwa neNeutron Transmutation Doping (NTD) maitiro, umo neutron irradiation pane isina kuvhurika float zone silicon kugadzira silicon isotopes inovharirwa neutrons uye yobva yaora muinodiwa dopants kuzadzisa chinangwa chedoping.Kuburikidza nekugadzirisa mwero weiyo neutron radiation, iyo resistivity inogona kuchinjwa pasina kuunza ekunze dopants uye nekudaro kuvimbisa kuchena kwezvinhu.FZ NTD silicon wafers (Float Zone Neutron Transmutation Doping Silicon) ine premium tekinoroji zvimiro zveuniform doping concentration uye yunifomu radial resistivity kugovera, yakaderera kusachena mazinga,uye high minority carrier lifetime.

Delivery

Semusika unotungamira mutengesi weNTD silicon yekuvimbisa mashandisirwo emagetsi, uye nekutevera kukura kuri kuda kwemhando yepamusoro mawafers, yepamusoro FZ NTD silicon wafer.kuWestern Minmetals (SC) Corporation inogona kupihwa kune vatengi vedu pasi rese muhukuru hwakasiyana kubva pa2 ″, 3 ″, 4 ″, 5 ″ uye 6 ″ dhayamita (50mm, 75mm, 100mm, 125mm uye 150mm) uye yakafara siyana yekudzivirira. 5 kusvika 2000 ohm.cm mu <1-1-1>, <1-1-0>, <1-0-0> mativi ane as-chekwa, akarembera, akaiswa uye akakwenenzverwa pamusoro pekupedzisira mupasuru yefoam box kana kaseti. , kana seyakagadzirirwa kutsanangurwa kune yakakwana mhinduro.

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Kutsanangurwa Kwehunyanzvi

FZ NTD Silicon Wafer

Semutengesi anotungamira mumusika weFZ NTD silicon yekuvimbisa mashandisirwo emagetsi, uye nekutevera kukura kuri kuda kwemhando yepamusoro mawafers, yepamusoro FZ NTD silicon wafer kuWestern Minmetals (SC) Corporation inogona kupihwa kune vatengi vedu pasi rese muhukuru hwakasiyana kubva pa2. ″ kusvika 6″ mudhayamita (50, 75, 100, 125 uye 150mm) uye zvakasiyana-siyana zve resistivity 5 kusvika 2000 ohm-cm mu <1-1-1>, <1-1-0>, <1-0- 0> yekumisikidzwa neyakavharwa, yakamiswa uye yakakwenenzverwa pamusoro pekupedzisira mupakeji yefuro bhokisi kana kaseti, bhokisi bhokisi kunze kana seyakajairwa yakatarwa kune yakakwana mhinduro.

Aihwa.	Items	Mataurirwo Akaitwa
1	Size	2"	3"	4"	5"	6"
2	Diameter	50.8±0.3	76.2±0.3	100±0.5	125±0.5	150±0.5
3	Conductivity	n-mhando	n-mhando	n-mhando	n-mhando	n-mhando
4	Orientation	<100>, <111>, <110>
5	Ukobvu μm	279, 381, 425, 525, 575, 625, 675, 725 kana sezvinodiwa
6	Kuramba Ω-cm	36-44, 44-52, 90-110, 100-250, 200-400 kana sezvinodiwa
7	RRV max	8%, 10%, 12%
8	TTV μm max	10	10	10	10	10
9	Bow/Warp μm max	30	30	30	30	30
10	Mutakuri Hupenyu hwose μs	> 200, > 300, > 400 kana sezvinodiwa
11	Surface Finish	Se-chekwa, Yakaputirwa, yakaporeswa
12	Packing	Foam bhokisi mukati, katoni bhokisi kunze.

Basic Material Parameter

Symbol	Si
Atomic Number	14
Atomic Weight	28.09
Element Category	Metalloid
Group, Period, Block	14, 3, P
Crystal chimiro	Diamond
Color	Rima grey
Melting Point	1414°C, 1687.15 K
Boiling Point	3265°C, 3538.15 K
Density pa300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
Nhamba yeCAS	7440-21-3
EC Nhamba	231-130-8

FZ-NTD Silicon Waferchinhu chinonyanya kukosha kune maapplication ane simba repamusoro, tekinoroji uye mune semiconductor zvishandiso zvinofanirwa kushanda mumamiriro akanyanya kana panodiwa kushomeka kwekudzivirira kuchinjika pawafer, senge gedhi-turn-off thyristor GTO, static induction thyristor SITH, hofori. transistor GTR, insulate-gedhi bipolar transistor IGBT, yakawedzera HV diode PIN.FZ NTD n-mhando yesilicon wafer zvakare sechinhu chikuru chinoshanda cheakasiyana ma frequency converter, rectifiers, mahombe-simba ekudzora zvinhu, magetsi matsva emagetsi emagetsi, mafotoelectronic zvishandiso, silicon rectifier SR, silicon control SCR, uye zvinhu zvinotaridzika senge lenzi nemahwindo. zvekushandisa terahertz.