Gallium Arsenide GaAs

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Gallium ArsenideGaAs ari a yakananga bhendi gap compound semiconductor yeboka III-V yakagadzirwa neinenge 6N 7N yakakwira purity gallium uye arsenic element, uye yakakura crystal neVGF kana LEC process kubva kuhutsanana kwakanyanya polycrystalline gallium arsenide, grey ruvara kutaridzika, cubic crystals ane zinc-blende chimiro.Iine doping yekabhoni, silicon, tellurium kana zinc kuti uwane n-mhando kana p-mhando uye semi-inodzivirira conductivity zvichiteerana, cylindrical InAs crystal inogona kuchekwa uye kugadzirwa isina chinhu uye wafer mune se-akachekwa, akaiswa, akakwenenzverwa kana epi. -yakagadzirira MBE kana MOCVD epitaxial kukura.Gallium Arsenide wafer inonyanya kushandiswa kugadzira zvigadzirwa zvemagetsi senge infrared light-emitting diodes, laser diodes, optical windows, field-effect transistors FETs, linear yedigital ICs uye solar maseru.Zvikamu zveGaAs zvinobatsira mu-ultra-high radio frequency uye nekukurumidza magetsi switching application, isina simba-signal amplification application.Uyezve, Gallium Arsenide substrate chinhu chakanakira kugadzirwa kwezvinhu zveRF, microwave frequency uye monolithic ICs, uye ma LED zvishandiso mu optical kutaurirana uye kudzora masisitimu eiyo inozadza horo kufamba, yakakwirira simba uye tembiricha kugadzikana.

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Gallium Arsenide GaAs kuWestern Minmetals (SC) Corporation inogona kupihwa se polycrystalline bundu kana imwechete crystal wafer mune as-akachekwa, etched, polished, kana epi-ready wafers muhukuru hwe2 "3" 4" uye 6" (50mm, 75mm, 100mm, 150mm) dhayamita, ine p-mhando, n-mhando kana semi-insulating conductivity, uye <111> kana <100> kutarisisa.Iyo yakagadziriswa yakatarwa ndeye mhinduro yakakwana kune vatengi vedu pasi rese.

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Kutsanangurwa Kwehunyanzvi

Gallium Arsenide

GaAs

Gallium Arsenide GaAswafers anonyanya kushandiswa kugadzira zvigadzirwa zvemagetsi senge infrared light-emitting diode, laser diodes, optical windows, field-effect transistors FETs, mutsara wedigital ICs uye solar maseru.Zvikamu zveGaAs zvinobatsira mu-ultra-high radio frequency uye nekukurumidza magetsi switching application, isina simba-signal amplification application.Uyezve, Gallium Arsenide substrate chinhu chakanakira kugadzirwa kwezvinhu zveRF, microwave frequency uye monolithic ICs, uye ma LED zvishandiso mu optical kutaurirana uye kudzora masisitimu eiyo inozadza horo kufamba, yakakwirira simba uye tembiricha kugadzikana.

Aihwa.	Items	Mataurirwo Akaitwa
1	Size	2"	3"	4"	6"
2	Diameter mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Kukura Nzira	VGF	VGF	VGF	VGF
4	Conductivity Type	N-Type/Si kana Te-doped, P-Type/Zn-doped, Semi-Insulating/Un-doped
5	Orientation	(100)±0.5°	(100)±0.5°	(100)±0.5°	(100)±0.5°
6	Ukobvu μm	350±25	625±25	625±25	650±25
7	Oriental Flat mm	17±1	22±1	32±1	Notch
8	Identification Flat mm	7±1	12±1	18±1	-
9	Kuramba Ω-cm	(1-9)E(-3) yep-mhando kana n-mhando, (1-10)E8 ye semi-insulating
10	Kufamba cm2/vs	50-120 yep-mhando, (1-2.5)E3 yen-mhando, ≥4000 ye semi-insulating
11	Carrier Concentration cm-3	(5-50)E18 yep-mhando, (0.8-4)E18 yen-mhando
12	TTV μm max	10	10	10	10
13	Bow μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	EPD masendimita-2	5000	5000	5000	5000
16	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Packing	Single wafer mudziyo wakavharwa mualuminium composite bag.
18	Mashoko	Mechanical giredhi GaAs wafer inowanikwawo pakukumbira.

Linear Formula	GaAs
Molecular Weight	144.64
Crystal chimiro	Zinc blende
Chitarisiko	Gray crystalline yakasimba
Melting Point	1400°C, 2550°F
Boiling Point	N/A
Density pa300K	5.32 g/cm³
Energy Gap	1.424 eV
Intrinsic resistivity	3.3E8 Ω-cm
Nhamba yeCAS	1303-00-0
EC Nhamba	215-114-8

Gallium Arsenide GaAskuWestern Minmetals (SC) Corporation inogona kupihwa sebundu repolycrystalline kana imwechete crystal wafer mune-yakachekwa, yakamiswa, yakakwenenzverwa, kana epi-yakagadzirira mawafer muhukuru hwe2 "3" 4" uye 6" (50mm, 75mm, 100mm. , 150mm) dhayamita, ine p-mhando, n-mhando kana semi-insulating conductivity, uye <111> kana <100> orientation.Iyo yakagadziriswa yakatarwa ndeye mhinduro yakakwana kune vatengi vedu pasi rese.