Gallium oxide

Tsanangudzo

Gallium oxide Ga₂O₃99.99%. is transparent oxide semiconductor material ine yakanakisa zvivakwa zvebhendi rakakura kwazvo-gap rinopfuura 4.9eV, uye kuwanikwa kwehukuru-hukuru, hwemhando yepamusoro ma substrates emuno anogadzirwa kubva kunyungudika-yakakura yakawanda imwe makristasi.Gallium oxide Ga₂O₃ine tarisiro yakafara yekushandiswa muindasitiri yeoptoelectronic senge insulating layer yeGa-based semiconductor zvinhu, se ultraviolet mafirita, semakemikari probes yeokisijeni, chinodzivirira chinodzivirira chekubatana kwakasimba, optic semiconductor zvishandiso uye ceramic application.Gallium oxide inoshandiswawo muchiedza emitting diodes LEDs fluorescent poda, yakakwira kuchena reagent, pamwe nemalaser uye zvimwe zvinhu zvinopenya nezvimwe.

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Gallium Oxide kana Gallium Trioxide Ga₂O₃ mu α kana β mhando yecrystallographic fomu nekuchena kwe99.99%, 99.999% uye 99.9999% (4N 5N 6N) kuWestern Minmetals (SC) Corporation inogona kuendeswa muhukuru hwehupfu D50 ≤ 4.0micron, -80mesh ≤80mesh 0. 50-100 mesh (0.15-0.30micron) mupasuru ye1kg, 2kg mubhodhoro repolyethylene, kana 1kg, 2kg, 5kg mune vacuum aluminium composite bhegi ine katoni bhokisi kunze kwe10kg kana 20kg mambure ega ega, kana seyakagadziriswa mhinduro kune yakakwana .

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Kutsanangurwa Kwehunyanzvi

Ga₂O₃

Chitarisiko	White crystal
Molecular Weight	187.44
Density	-
Melting Point	1740 °C
CAS Nha.	12024-21-4

Aihwa.	Item		Mataurirwo Akaitwa
1	KuchenaGa₂O₃≥		Kusachena(ICP-MS PPM Max imwe neimwe)
2	4N	99.99%	Mg/Ni/Mn 3.0, Cr/Ca/Co/Cd/Cu/Sn 5.0, Pb 8.0, Na/Fe/Al 10	Total ≤100
	5N	99.999%	Mg/Ni/Mn 0.1, Cr/ Ca/Cu/Cd/Cu/Sn 0.5, Na/Al/Fe 1.0, Pb 1.5	Total ≤10
	6N	99.9999%	Mn/Ca/Co/Cd 0.05, Pb/Al/Fe/Cu/Sn 0.1	Zvose ≤1.0
3	Crystallographic Fomu		α kana β mhando
4	Size		D₅₀≤ 4um, -80 mesh kana 50-100 mesh poda
5	Packing		1kg, 2kg mubhodhoro repurasitiki, kana 1kg, 2kg, 5kg mualuminium composite bhegi nebhokisi bhokisi kunze

Gallium oxide Ga₂O₃kana Gallium Trioxide Ga₂O₃mu α kana β mhando yecrystallographic fomu nekuchena kwe99.99%, 99.999% uye 99.9999% (4N 5N 6N) kuWestern Minmetals (SC) Corporation inogona kuendeswa muhukuru hwehupfu D50 ≤ 4.0micron, -80mesh ≤80mesh 0. 50-100 mesh (0.15-0.30micron) mupasuru ye1kg, 2kg mubhodhoro repolyethylene, kana 1kg, 2kg, 5kg muvacuum aluminium composite bhegi ine katoni bhokisi kunze, kana seyakagadzirirwa zvakatemwa kune yakakwana mhinduro.

Gallium oxide Ga₂O₃kana Gallium Trioxide ine tarisiro yakafara yekushandiswa muindasitiri yeoptoelectronic senge insulating layer yeGa-based semiconductor zvinhu, se ultraviolet mafirita, semakemikari probes yeokisijeni, chinodzivirira chinodzivirira chekubatana kwakasimba, optic semiconductor zvishandiso uye ceramic application.Gallium oxide inoshandiswawo muchiedza emitting diodes LEDs fluorescent poda, yakakwira kuchena reagent, pamwe nemalaser uye zvimwe zvinhu zvinopenya nezvimwe.