Indium Antimonide InSb

Tsanangudzo

Indium Antimonide InSb, semiconductor yeboka III-V crystalline compounds ine zinc-blende lattice structure, inogadzirwa ne6N 7N high purity Indium uye antimony elements, uye inokura imwe crystal neVGF nzira kana Liquid Encapsulated Czochralski LEC nzira kubva kune multiple zone yakanatswa polycrystalline ingot, iyo inogona kuchekwa uye kugadzirwa kuita wafer uye block mushure.InSb ndeye yakananga shanduko semiconductor ine yakamanikana bhendi gap ye 0.17eV pakamuri tembiricha, yakakwirira senitivity kusvika 1-5μm wavelength uye Ultra yakakwirira horo kufamba.Indium Antimonide InSb n-mhando, p-mhando uye semi-insulating conductivity kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe 1 ″ 2 ″ 3 ″ uye 4” (30mm, 50mm, 75mm, 100mm) dhayamita, kutaridzika < 111> kana <100>, uye newafer pamusoro pekupedzisira se-akachekwa, akarembera, akaiswa uye akakwenenzverwa.Indium Antimonide InSb chinangwa cheDia.50-80mm ine un-doped n-type inowanikwawo.Zvichakadaro, polycrystalline indium antimonide InSb (multicrystal InSb) ine saizi yebundu isina kujairika, kana isina chinhu (15-40) x (40-80) mm, uye denderedzwa bhaa reD30-80mm zvakare inogadziriswa pakukumbira kune yakakwana mhinduro.

Application

Indium Antimonide InSb ndiyo imwe yakanaka substrate yekugadzirwa kweakawanda e-e-art zvikamu uye zvishandiso, senge advanced thermal imaging solution, FLIR system, hall element uye magnetoresistance effect element, infrared homing missile nhungamiro system, inopindura zvakanyanya Infrared photodetector sensor. , yakakwirira-chaiyo magineti uye inotenderera resistivity sensor, focal planar arrays, uye zvakare yakagadziridzwa senge terahertz mwaranzi sosi uye mune infrared nyeredzi nzvimbo teresikopu nezvimwe.

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Kutsanangurwa Kwehunyanzvi

Indium Antimonide

InSb

Indium Antimonide Substrate(InSb Substrate, InSb Wafer) n-mhando kana p-mhando kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe1" 2" 3" uye 4" (30, 50, 75 uye 100mm) dhayamita, kutaridzika <111> kana <100>, uye Iine wafer pamusoro peyakapfekwa, yakamiswa, yakakwenenzverwa kupera.Indidium Antimonide Single Crystal bar (InSb Monocrystal bar) inogona kupihwa kana wakumbira.

Indium AntimonidePolycrystalline (InSb Polycrystalline, kana multicrystal InSb) ine saizi yebundu isina kujairika, kana isina (15-40) x(40-80) mm inogadziriswawo pakukumbira kune mhinduro yakakwana.

Zvichakadaro, Indium Antimonide Target (InSb Target) yeDia.50-80mm ine un-doped n-type inowanikwawo.

Aihwa.	Items	Mataurirwo Akaitwa
1	Indium Antimonide Substrate	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Kukura Nzira	LEC	LEC	LEC
4	Conductivity	P-type/Zn,Ge doped, N-type/Te-doped, Un-doped
5	Orientation	(100)±0.5°, (111)±0.5°
6	Ukobvu μm	500±25	600±25	800±25
7	Oriental Flat mm	16±2	22±1	32.5±1
8	Identification Flat mm	8±1	11±1	18±1
9	Kufamba cm2/Vs	1-7E5 N/un-doped, 3E5-2E4 N/Te-doped, 8-0.6E3 kana ≤8E13 P/Ge-doped
10	Carrier Concentration cm-3	6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 kana <1E14 P/Ge-doped
11	TTV μm max	15	15	15
12	Bow μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	50	50	50
15	Surface Finish	P/E, P/P	P/E, P/P	P/E, P/P
16	Packing	Single wafer mudziyo wakavharwa muAluminium bag.

Aihwa.	Items	Mataurirwo Akaitwa
Aihwa.	Items	Indium Antimonide Polycrystalline	Indium Antimonide Target
1	Conductivity	Undoped	Undoped
2	Carrier Concentration cm^-3	6E13-3E14	1.9-2.1E16
3	Mobility cm²/Vs	5-7E5	6.9-7.9E4
4	Size	15-40x40-80 mm	D(50-80) mm
5	Packing	Mune composite aluminium bag, katoni bhokisi kunze

Linear Formula	InSb
Molecular Weight	236.58
Crystal chimiro	Zinc blende
Chitarisiko	Dark grey metallic crystals
Melting Point	527 °C
Boiling Point	N/A
Density pa300K	5.78 g/cm³
Energy Gap	0.17 eV
Intrinsic resistivity	4E(-3) Ω-cm
Nhamba yeCAS	1312-41-0
EC Nhamba	215-192-3

Indium Antimonide InSbwafer ndiyo imwe yakanakira substrate yekugadzirwa kweakawanda mamiriro-e-art zvikamu uye zvishandiso, senge advanced thermal imaging solution, FLIR system, hall element uye magnetoresistance effect element, infrared homing missile direction system, inopindura zvakanyanya Infrared photodetector sensor, yakakwirira. -chaiyo magineti uye inotenderera resistivity sensor, focal planar arrays, uye zvakare yakagadziridzwa senge terahertz mwaranzi sosi uye mune infrared astronomical space teresikopu nezvimwe.