Tsanangudzo
Indium arsenide InAs crystal is a compound semiconductor yeboka III-V yakagadzirwa neinenge 6N 7N pure Indium neArsenic element uye yakakura imwe crystal neVGF kana Liquid Encapsulated Czochralski ( LEC ) process, grey color kuoneka, cubic crystals ane zinc-blende structure. , nzvimbo yekunyungudika ye942 °C.Indium arsenide band gap ishanduko yakananga yakafanana negallium arsenide, uye iyo yakarambidzwa bhendi hupamhi i0.45eV (300K).InAs crystal ine yakakwira kufanana kwemagetsi paramita, garandi retisi, yakakwira erekitironi kufamba uye yakaderera density.A cylindrical InAs crystal inokura neVGF kana LEC inogona kuchekwa uye kugadzirwa kuita wafer se-yakachekwa, yakamiswa, yakakwenenzverwa kana epi-yakagadzirira MBE kana MOCVD epitaxial kukura.
Applications
Indium arsenide crystal wafer inzvimbo huru yekugadzira zvishandiso zveHoro uye magineti magineti yekufamba kwayo horo asi nhete yesimba bandgap, chinhu chakanakira kuvaka infrared detectors ine wavelength renji ye1–3.8 µm inoshandiswa mukushandiswa kwesimba repamusoro-soro. pakamuri tembiricha, pamwe nepakati wavelength infrared super lattice lasers, yepakati-infrared LEDs zvishandiso zvekugadzira yayo 2-14 μm wavelength renji.Uyezve, InAs inzvimbo yakanaka yekuwedzera kutsigira iyo heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb kana AlGaSb super lattice chimiro nezvimwe.
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Kutsanangurwa Kwehunyanzvi
Indium Arsenide Crystal Waferinzvimbo huru yekugadzira zvishandiso zveHoro uye magineti emagetsi sensor yekufamba kwayo kwehoro yepamusoro asi nhete yesimba bhendi, chinhu chakanakira kuvaka infrared detectors ine wavelength renji ye1-3.8 µm inoshandiswa mune yakakwirira-simba maapplication pakamuri tembiricha, pamwe nepakati wavelength infrared super lattice lasers, yepakati-infrared LEDs zvishandiso zvekugadzira yayo 2-14 μm wavelength renji.Uyezve, InAs inzvimbo yakanaka yekuwedzera kutsigira iyo heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb kana AlGaSb super lattice chimiro nezvimwe.
Aihwa. | Items | Mataurirwo Akaitwa | ||
1 | Size | 2" | 3" | 4" |
2 | Diameter mm | 50.5±0.5 | 76.2±0.5 | 100±0.5 |
3 | Kukura Nzira | LEC | LEC | LEC |
4 | Conductivity | P-type/Zn-doped, N-type/S-doped, Un-doped | ||
5 | Orientation | (100)±0.5°, (111)±0.5° | ||
6 | Ukobvu μm | 500±25 | 600±25 | 800±25 |
7 | Oriental Flat mm | 16±2 | 22±2 | 32±2 |
8 | Identification Flat mm | 8±1 | 11±1 | 18±1 |
9 | Kufamba cm2/Vs | 60-300, ≥2000 kana sezvinodiwa | ||
10 | Carrier Concentration cm-3 | (3-80)E17 kana ≤5E16 | ||
11 | TTV μm max | 10 | 10 | 10 |
12 | Bow μm max | 10 | 10 | 10 |
13 | Warp μm max | 15 | 15 | 15 |
14 | Dislocation Density cm-2 max | 1000 | 2000 | 5000 |
15 | Surface Finish | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Packing | Single wafer mudziyo wakavharwa muAluminium bag. |
Linear Formula | InAs |
Molecular Weight | 189.74 |
Crystal chimiro | Zinc blende |
Chitarisiko | Gray crystalline yakasimba |
Melting Point | (936-942)°C |
Boiling Point | N/A |
Density pa300K | 5.67 g/cm3 |
Energy Gap | 0.354 eV |
Intrinsic Resistivity | 0.16 Ω-cm |
Nhamba yeCAS | 1303-11-3 |
EC Nhamba | 215-115-3 |
Indium Arsenide InAskuWestern Minmetals (SC) Corporation inogona kupihwa sebundu repolycrystalline kana kristaro imwechete se-yakachekwa, yakamiswa, yakakwenenzverwa, kana epi-yakagadzirira mawafer muhukuru hwe2 "3" uye 4" (50mm, 75mm,100mm) dhayamita, uye p-mhando, n-mhando kana un-doped conductivity uye <111> kana <100> kutarisisa.Iyo yakagadziriswa yakatarwa ndeye mhinduro yakakwana kune vatengi vedu pasi rese.
Procurement Mazano
Indium Arsenide Wafer