Silicon Carbide SiC

Tsanangudzo

Silicon Carbide Wafer SiC, yakaoma zvakanyanya, yakagadzirwa nekristalline musanganiswa wesilicon uye kabhoni neMOCVD nzira, uye inoratidzayakasarudzika yakafara bhendi gap uye mamwe maitiro akanaka eiyo yakaderera coefficient yekuwedzera kwekupisa, tembiricha yepamusoro yekushanda, yakanaka kupisa kupisa, kudzika kuchinjika uye kurasikirwa kwekuita, simba rakawanda, kukwirira kwemafuta ekupisa uye simba rakasimba rekuputsika kwegetsi, pamwe nekuwedzera kunyura kwemhepo. mamiriro.Silicon Carbide SiC kuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe2 ″ 3' 4" uye 6 ″ (50mm, 75mm, 100mm, 150mm) dhayamita, ine n-mhando, semi-insulating kana dummy wafer yeindasitiri. uye laboratory application.Chero zvakagadziridzwa zvakagadziriswa ndezvemhinduro yakakwana kune vatengi vedu pasi rese.

Applications

Yakakwira mhando 4H/6H Silicon Carbide SiC wafer yakanakira kugadzira akawanda ekucheka-kumucheto kwepamusoro nekukurumidza, yakakwirira-tembiricha & yakakwira-voltage magetsi emagetsi akadai seSchottky diodes & SBD, high-simba switching MOSFETs & JFETs, nezvimwewo. zvakare chinhu chinodiwa mukutsvagisa & kuvandudza kweiyo insulated-gedhi bipolar transistors uye thyristors.Seyakatanhamara chizvarwa chitsva semiconducting zvinhu, Silicon Carbide SiC wafer inoshandawo seyakakwenenzverwa yekupisa mumhando yepamusoro-simba ma LEDs, kana seyakagadzika uye yakakurumbira substrate yekukura GaN layer ichifarira ramangwana rakanangwa kuongorora kwesainzi.

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Kutsanangurwa Kwehunyanzvi

Silicon Carbide SiC

Silicon Carbide SiCkuWestern Minmetals (SC) Corporation inogona kupihwa muhukuru hwe2 ″ 3' 4" uye 6 ″ (50mm, 75mm, 100mm, 150mm) dhayamita, ine n-mhando, semi-inodzivirira kana dummy wafer yeindasitiri uye murabhoritari application. .Any customized specification ndeyekugadzirisa kwakakwana kune vatengi vedu pasi rose.

Linear Formula	SiC
Molecular Weight	40.1
Crystal chimiro	Wurtzite
Chitarisiko	Solid
Melting Point	3103±40K
Boiling Point	N/A
Density pa300K	3.21 g/cm³
Energy Gap	(3.00-3.23) eV
Intrinsic resistivity	>1E5 Ω-cm
Nhamba yeCAS	409-21-2
EC Nhamba	206-991-8

Aihwa.	Items	Mataurirwo Akaitwa
1	SiC size	2"	3"	4"	6"
2	Diameter mm	50.8 0.38	76.2 0.38	100 0.5	150 0.5
3	Kukura Nzira	MOCVD	MOCVD	MOCVD	MOCVD
4	Conductivity Type	4H-N, 6H-N, 4H-SI, 6H-SI
5	Kuramba Ω-cm	0.015-0.028;0.02-0.1;>1E5
6	Orientation	0°±0.5°;4.0° kuenda <1120>
7	Ukobvu μm	330±25	330±25	(350-500)±25	(350-500)±25
8	Primary Flat Nzvimbo	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Primary Flat Length mm	16±1.7	22.2±3.2	32.5±2	47.5±2.5
10	Secondary Flat Nzvimbo	Silicon yakatarisana kumusoro: 90 °, newachi kubva kuprime flat ± 5.0 °
11	Secondary Flat Length mm	8±1.7	11.2±1.5	18±2	22±2.5
12	TTV μm max	15	15	15	15
13	Bow μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Kusabatanidzwa kumucheto mm max	1	2	3	3
16	Micropipe Density cm-2	<5, maindasitiri;<15, lab;<50, dummy
17	Dislocation cm-2	<3000, maindasitiri;<20000, lab;<500000, dummy
18	Surface Roughness nm max	1 (yakaporeswa), 0.5 (CMP)
19	Mitswe	Hapana, yegiredhi reindasitiri
20	Hexagonal Plates	Hapana, yegiredhi reindasitiri
21	Makwara	≤3mm, kureba kwese kwakaderera pane substrate dhayamita
22	Edge Chips	Hapana, yegiredhi reindasitiri
23	Packing	Single wafer mudziyo wakavharwa mualuminium composite bag.

Silicon Carbide SiC 4H/6HWafer yemhando yepamusoro yakanakira kugadzirwa kweakawanda ekucheka-kumucheto epamusoro nekukurumidza, epamusoro-tembiricha & akakwira-voltage magetsi emagetsi akadai seSchottky diodes & SBD, high-power switching MOSFETs & JFETs, etc. Izvo zvakare zvinhu zvinodikanwa mu tsvagiridzo & kusimudzira kweakavharirwa-gedhi bipolar transistors uye thyristors.Seyakatanhamara chizvarwa chitsva semiconducting zvinhu, Silicon Carbide SiC wafer inoshandawo seyakakwenenzverwa yekupisa mumhando yepamusoro-simba ma LEDs, kana seyakagadzika uye yakakurumbira substrate yekukura GaN layer ichifarira ramangwana rakanangwa kuongorora kwesainzi.