Imwe Crystal Germanium Wafer kana Ingotine n-type, p-type uye un-doped conductivity uye orientation <100> kuWestern Minmetals (SC) Corporation inogona kuendeswa muhukuru hwe2, 3, 4 uye 6 inch dhayamita (50mm, 75mm, 100mm uye 150mm) ne Kupedzwa kwepamusoro kweakamisikidzwa kana kukwenenzverwa mupakeji yefuro bhokisi kana kaseti yewafer uye muhombodo yepurasitiki yakavharwa yeingot ine katoni bhokisi kunze, polycrystalline germanium ingot inowanikwawo pakukumbira, kana seyakajairwa yakatarwa kuwana mhinduro yakakwana.
Symbol | Ge |
Atomic Number | 32 |
Atomic Weight | 72.63 |
Element Category | Metalloid |
Group, Period, Block | 14, 4, P |
Crystal chimiro | Diamond |
Color | Grayish white |
Melting Point | 937°C, 1211.40K |
Boiling Point | 2833°C, 3106K |
Density pa300K | 5.323 g/cm3 |
Intrinsic resistivity | 46 Ω-cm |
Nhamba yeCAS | 7440-56-4 |
EC Nhamba | 231-164-3 |
Aihwa. | Items | Mataurirwo Akaitwa | |||
1 | Germanium Wafer | 2" | 3" | 4" | 6" |
2 | Diameter mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 150±0.5 |
3 | Kukura Nzira | VGF kana CZ | VGF kana CZ | VGF kana CZ | VGF kana CZ |
4 | Conductivity | P-mhando / doped (Ga kana In), N-mhando / doped Sb, Un-doped | |||
5 | Orientation | (100)±0.5° | (100)±0.5° | (100)±0.5° | (100)±0.5° |
6 | Ukobvu μm | 145, 175, (500-1000) | |||
7 | Kuramba Ω-cm | 0.001-50 | 0.001-50 | 0.001-50 | 0.001-50 |
8 | Kufamba cm2/Vs | >200 | >200 | >200 | >200 |
9 | TTV μm max | 5, 8, 10 | 5, 8, 10 | 5, 8, 10 | 5, 8, 10 |
10 | Bow μm max | 15 | 15 | 15 | 15 |
11 | Warp μm max | 15 | 15 | 15 | 15 |
12 | Dislocation cm-2 max | 300 | 300 | 300 | 300 |
13 | EPD masendimita-2 | <4000 | <4000 | <4000 | <4000 |
14 | Particle Inoverenga a/wafer max | 10 (pa ≥0.5μm) | 10 (pa ≥0.5μm) | 10 (pa ≥0.5μm) | 10 (pa ≥0.5μm) |
15 | Surface Finish | P/E, P/P kana sezvinodiwa | |||
16 | Packing | Single wafer mudziyo kana kaseti mukati, bhokisi bhokisi panze |
Aihwa. | Items | Mataurirwo Akaitwa | |||
1 | Germanium Ingot | 2" | 3" | 4" | 6" |
2 | Type | P-mhando / doped (Ga, In), N-mhando / doped (As, Sb), Un-doped | |||
3 | Kuramba Ω-cm | 0.1-50 | 0.1-50 | 0.1-50 | 0.1-50 |
4 | Mutakuri Hupenyu hwose μs | 80-600 | 80-600 | 80-600 | 80-600 |
5 | Ingot Length mm | 140-300 | 140-300 | 140-300 | 140-300 |
6 | Packing | Yakavharwa mubhegi repurasitiki kana furo bhokisi mukati, katoni bhokisi kunze | |||
7 | Remark | Polycrystalline germanium ingot inowanikwa pakukumbira |
Imwe Crystal Germaniuminowana inovimbisa uye yakafara maapplication, umo magiredhi emagetsi anoshandiswa kune diode uye transistors, Infrared kana optical giredhi germanium isina kana hwindo ndeye IR optical hwindo kana disks, optical components rinoshandiswa muchiratidzo chehusiku uye thermographic imaging mhinduro dzekuchengetedza, kureba tembiricha kuyerwa, kurwisa moto uye maindasitiri ekutarisa emidziyo, zvishoma doped P uye N mhando yeGermanium wafer inogona kushandiswawo kuHoro maitiro ekuyedza.Sero giredhi ndeye substrates inoshandiswa muIII-V katatu-junction solar maseru uye emagetsi Concentrated PV masisitimu esolar cell nezvimwe.